Patent
  Elite SemiconductorI Inc. patent inventions provide the Intellectual Proprietary protection of the OpenShort™ Platform and the ESI OpenShort™ Platform
  Patent US 8,312,401 (Method for Smart Defect Screen and Sample) incorporated the trade secret procedures of the OpenShort™ Platform and the ESI OpenShort™ Platform into core invention. Reversely, the trade secrets of the OpenShort™ Platform and the ESI OpenShort™ Platform further proves the invention of US 8,312,401.
  Furthermore, the invention of superposing inline defect onto design layout pattern in patent US 8,473,223 (Method for Utlizing Fabrication Defect of An Article) is the art of this Newton's law patent. Elite SemiconductorI Inc. US patent list

1. US 8,473,223 Method for Utlizing Fabrication Defect of An Article
2. US 8,312,401 Method for Smart Defect Screen and Sample
3. US 9,129,237 Integrated Interfacing System and Method for
Intelligent Defect Yield Solutons
4. US 10,228,421 Method and System for Intelligent Defect Classification and Sampling, and Non-Transitory Computer-Readable Storage Device
5. US 10,726,192 Semiconductor Fab's Defect Operating System and Method Thereof
6. US 11,016,035 Smart Defect Calibration System and The Method Thereof
7. US 11,719,648 Method for Smart Conversion and Calibration off Coordinate
8. US 11,719,649 Method for Smart Conversion and Calibration off Coordinate
9. US 11,719,650 Method for Performing Smart Semiconductor Wafer Defect Calibration
10. US 11,761,904 Smart Defect Calibration System in Semiconductor Wafer Manufacturing
11. US 11,774,372 Smart Coordinate Conversion and Calibration System in Semiconductor Wafer Manufacturing
12. US 11,774,373 Smart Coordinate Conversion and Calibration System in Semiconductor Wafer Manufacturing
13. US 10,409,924 Intelligent CAA Failure Pre-Diagnosis Method and System for Design Layout

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