ESI OpenShort™ Smart Defect Screen and Sample Product

ESI OpenShort™ Smart Defect Screen and Sample Product
  Very often Fab suffers big issue in discovering bad defects in advanced technology. ESI’s invention patent, Method for smart defect screen and sample, maps inline defect to corresponding IC design layout and classify nuisance defect and killer defect accurately.
  A first Coordinate Conversion was first developed in early 2010 and a revised Mask Frame-based Coordinate Conversion proved its accuracy in May, 2010 under all kind of wafer inspection conditions. The Coordinate Conversion of ESI OpenShort™ Smart Defect Screen and Sample Product paves the foundation to execute Killer Defect Index accurately.
  Then, a patented Killer Defect Index (US 8,312,401) was developed in early 2010 as well. The execution of Killer Defect Index can classify nuisance defect and killer defect accurately. The breakthrough in ESI OpenShort™ Smart Defect Screen and Sample Product was proven to outperform superior to competitor at 300%.