OpenShort™ Smart Defect Screen and Sample Product
Very often Fab suffers big issue in discovering bad defects in
advanced technology. ESI’s invention patent, Method for smart defect
screen and sample, maps inline defect to corresponding IC design layout
and classify nuisance defect and killer defect accurately.
A first Coordinate Conversion was first developed in early 2010 and a
revised Mask Frame-based Coordinate Conversion proved its accuracy in
May, 2010 under all kind of wafer inspection conditions. The Coordinate
Conversion of the OpenShort™ Smart Defect Screen and Sample
Product paves the foundation to execute Killer Defect Index accurately.
Then, a patented Killer Defect Index (US 8,312,401) was developed
in early 2010 as well. The execution of Killer Defect Index can classify
nuisance defect and killer defect accurately. The breakthrough in the
OpenShort™ Smart Defect Screen and Sample Product was proven to
outperform superior to traditional method at 300%.
